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2SK435
Silicon N-Channel Junction FET
REJ03G0812-0200 (Previous ADE-208-1171) Rev.2.00 Aug.10.2005
Application
Low frequency / High frequency amplifier
Outline
RENESAS Package code: PRSS0003DB-C (Package name: TO-92 (2)) 1. Drain 2. Source 3. Gate
3 2 1
Rev.2.00 Aug 10, 2005 page 1 of 5
2SK435
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IG Pch Tch Tstg Ratings 22 -22 100 10 300 150 -55 to +150 Unit V V mA mA mW C C
Electrical Characteristics
(Ta = 25C)
Item Gate to source breakdown voltage Gate cutoff current Gate to source cutoff voltage Drain current Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure Note: Symbol V(BR)GSS IGSS VGS(off) IDSS*1 |yfs| Ciss Crss NF Min -22 -- -- 12 20 -- -- -- Typ -- -- -- -- -- 9.0 2.8 0.5 Max -- -10 -2.5 30 -- 11.0 4.0 3.0 Unit V nA V mA mS pF pF dB Test conditions IG = -10 A, VDS = 0 VGS = -15 V, VDS = 0 VDS = 5 V, ID = 10 A VDS = 5 V, VGS = 0, Pulse test VDS = 5 V, ID = 10 mA, f = 1kHz VDS = 5 V, VGS = 0, f = 1MHz VDS = 5 V, VGS = 0, f = 1MHz VDS = 5 V, ID = 1 mA, f = 1kHz, Rg = 1k
1. The 2SK435 is grouped by IDSS as follows. Grade C 12 to 22 18 to 30 D
IDSS
Rev.2.00 Aug 10, 2005 page 2 of 5
2SK435
Maximum Channel Dissipation Curve 400
Channel Power Dissipation Pch (mW)
Typical Output Characteristics 20
VGS = 0V
300
Drain Current ID (mA)
16
-0.1 -0.2
12
200
-0.3
8
-0.4 -0.5 -0.6
100
4
0
50
100
150
200
0
2
4
6
8
10
Ambient Temperature Ta (C)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics 20 VDS = 5 V
Forward Transfer Admittance yfs (mS)
Forward Transfer Admittance vs. Drain Current 100 VDS = 5 V f = 1 kHz 10
Drain Current ID (mA)
16
12
8
1.0
4
-1.25
0
-1.0
-0.75
-0.5
-0.25
0
0.1 0.1
1.0
10
100
Gate to Source Voltage VGS (V)
Drain Current ID (mA)
Forwaed Transfer Admittance vs. Gate to Source Voltage 50
Gate Cutoff Current IGSS (pA) Forward Transfer Admittance yfs (mS)
Gate Cutoff Current vs. Gate to Source Voltage 1,000
40
VDS = 5 V f = 1 kHz
VDS = 0 100
30
10
20
10
1.0
-1.25
0
-1.0
-0.75
-0.5
-0.25
0.1 0 0
-10
-20
-30
-40
-50
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SK435
Input Capacitance vs. Drain to Source Voltage f = 1 MHz VGS = 0
Reverse Transfer Capacitance Crss (pF)
Reverse Transfer Capacitance vs. Drain to Source Voltage 100 50 f = 1 MHz VGS = 0
100
Input Capacitance Ciss (pF)
50
20 10 5
20 10 5 2 1 0.1
2 1 0.1
0.2
0.5
1.0
2
5
10
0.2
0.5
1.0
2
5
10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Noise Figure vs. Signal Source Resistance
Noise Figure vs. Frequency
12 10 8 6 4 2 0 10 VDS = 5 V ID = 1mA f = 1 kHz
12 10 8 6 4 2 0 10 VDS = 5 V ID = 1mA Rg = 1 k
Noise Figure NF (dB)
100
1k
10 k
100 k
Noise Figure NF (dB)
100
1k Frequency f (Hz)
10 k
100 k
Signal Source Resistance Rg ()
Rev.2.00 Aug 10, 2005 page 4 of 5
2SK435
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DA-C
Package Name TO-92(2) / TO-92(2)V
MASS[Typ.] 0.25g
Unit: mm
4.8 0.3
3.8 0.3
2.3 Max
0.5 Max
0.7
0.60 Max
12.7 Min
5.0 0.2
0.5 Max
1.27 2.54
Ordering Information
Part Name 2SK435CTZ 2SK435DTZ Quantity 2500 2500 Shipping Container Radial taping, Hold box Radial taping, Hold box
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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